PBSS4160PANP

DF N2 020 -6 PBSS4160PANP 14 January 2013 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4160PAN. PNP/PNP complement: PBSS5160PAP. 2. Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High efficiency due to less heat generation AEC-Q101 qualified 3. Applications Load switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Symbol VCEO IC ICM TR1 (NPN) RCEsat collector-emitter saturation resistance IC = 0.5 A; IB = 50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C 240 mΩ Quick reference data Parameter collector-emitter voltage collector current peak collector current single pulse; tp ≤ 1 ms Conditions open base Min Typ Max 60 1 1.5 Unit V A A Per transistor; for the PNP transistor with negative polarity Scan or click this QR code to view the latest information for this product Free Datasheet http://www.datasheet4u.com/ NXP Semiconductors PBSS4160PANP 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor Symbol TR2 (PNP) RCEsat Parameter collector-emitter saturation resistance Conditions IC = ...