MA3XD21

Schottky Barrier Diodes (SBD) MA3XD21 Silicon epitaxial planar type Unit: mm For high frequency rectification s Features IF(AV) = 1 A rectification is possible Low forward voltage VF Mini type 3-pin package 1 0.40+0.10 –0.05 3 1.50+0.25 –0.05 2.8+0.2 –0.3 0.16+0.10 –0.06 2 (0.65) (0.95) (0.95) 1.9±0.1 s Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse-voltage Average forward current *1 Non-repetitive peak forwardsurge-current *2 Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 15 15 1 3 125 −55 to +125 Unit V V A A °C °C 10˚ 2.90+0.20 –0.05 1.1+0.2 –0.1 1.1+0.3 –0.1 1: Anode 2: N.C. 3: Cathode EIAJ: SC-59 Mini3-G1 Package Marking Symbol: M6F Internal Connection 3 Note) *1: Mounted on a alumina PC board *2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) 1 0 to 0.1 2 s Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time Symbol IR VF Ct trr VR = 6 V IF = 1 A VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 180 12 Conditions Min Typ Max 1.5 0.4 Unit mA V pF ns Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 400 MHz 0.4±0.2 5˚ Publication date: February 2002 SKH00095BED 1 Free Data...