Document
2SC1815W
Elektronische Bauelemente
RoHS Compliant Product
NPN Transistor
Epitaxial Planar Transistor
Description
The 2SC1815W is designed for use in driver stage of AF amplifier and general purpose amplificaion.
REF. A A1 A2 D E HE
Min. 0.80 0 0.80 1.80 1.15 1.80
Millimeter
Max. 1.10 0.10 1.00 2.20 1.35 2.40
REF. L1 L b c e Q1
Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC.
Millimeter
ABSOLUTE MAXIMUM RATINGS
Symbol VCBO VCEO VEBO Collector-Base Voltage
Ta=25oC
Parameter Value 60 50 5 150 225 -55~+150 Units V V V mA mW
O
IC PD TJ,Tstg
Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction and Storage Temperature
o
C
ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified
Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage Base Saturation Voltage DC Current Gain Gain-Bandwidth Product Output Capacitance
Symbol BVCBO BVCEO BVEBO I CBO I EBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob
Min 60 50 5 120 25 80 -
Typ. -
Max -
Unit V V V nA nA
mV V
Test Conditions I C= 100 µA I C= 1mA I E= 10 µA VCB= 60V VEB=5V I C=100mA,IB=10mA I C=100mA,IB=10mA VCE= 6 V, I C=2mA VCE= 6 V, I C=150mA
100
100 250 1 700 3.5
MH z pF
VCE= 10 V, IC= 1mA,f=100MHz VCB=10V , f=1MHz
*Pulse width¡Ø380µs, Duty Cycle¡Ø 2%
Classification of hFE
Rank Range C4Y 120~240 C4G 200~400 C4B 350~700
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
Free Datasheet http://www.datasheet4u.com/
01-Jun-2002 Rev. A
Page 1 of 2
2SC1815W
Elektronische Bauelemente
NPN Transistor
Epitaxial Planar Transistor
Characteristics Curve
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
Free Datasheet http://www.datasheet4u.com/
01-Jun-2002 Rev. A
Page 2 of 2
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