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2SC1815W Dataheets PDF



Part Number 2SC1815W
Manufacturers SeCoS
Logo SeCoS
Description NPN Transistor
Datasheet 2SC1815W Datasheet2SC1815W Datasheet (PDF)

2SC1815W Elektronische Bauelemente RoHS Compliant Product NPN Transistor Epitaxial Planar Transistor Description The 2SC1815W is designed for use in driver stage of AF amplifier and general purpose amplificaion. REF. A A1 A2 D E HE Min. 0.80 0 0.80 1.80 1.15 1.80 Millimeter Max. 1.10 0.10 1.00 2.20 1.35 2.40 REF. L1 L b c e Q1 Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Millimeter ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO Collector-Base Voltage Ta=25oC P.

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2SC1815W Elektronische Bauelemente RoHS Compliant Product NPN Transistor Epitaxial Planar Transistor Description The 2SC1815W is designed for use in driver stage of AF amplifier and general purpose amplificaion. REF. A A1 A2 D E HE Min. 0.80 0 0.80 1.80 1.15 1.80 Millimeter Max. 1.10 0.10 1.00 2.20 1.35 2.40 REF. L1 L b c e Q1 Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Millimeter ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO Collector-Base Voltage Ta=25oC Parameter Value 60 50 5 150 225 -55~+150 Units V V V mA mW O IC PD TJ,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction and Storage Temperature o C ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage Base Saturation Voltage DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol BVCBO BVCEO BVEBO I CBO I EBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min 60 50 5 120 25 80 - Typ. - Max - Unit V V V nA nA mV V Test Conditions I C= 100 µA I C= 1mA I E= 10 µA VCB= 60V VEB=5V I C=100mA,IB=10mA I C=100mA,IB=10mA VCE= 6 V, I C=2mA VCE= 6 V, I C=150mA 100 100 250 1 700 3.5 MH z pF VCE= 10 V, IC= 1mA,f=100MHz VCB=10V , f=1MHz *Pulse width¡Ø380µs, Duty Cycle¡Ø 2% Classification of hFE Rank Range C4Y 120~240 C4G 200~400 C4B 350~700 http://www.SeCoSGmbH.com Any changing of specification will not be informed individual Free Datasheet http://www.datasheet4u.com/ 01-Jun-2002 Rev. A Page 1 of 2 2SC1815W Elektronische Bauelemente NPN Transistor Epitaxial Planar Transistor Characteristics Curve http://www.SeCoSGmbH.com Any changing of specification will not be informed individual Free Datasheet http://www.datasheet4u.com/ 01-Jun-2002 Rev. A Page 2 of 2 .


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