Transys
Electronics
L I M I T E D
SOT-89 Plastic-Encapsulated Transistors
2SB1308
FEATURES Power dissipation PCM: Coll...
Transys
Electronics
L I M I T E D
SOT-89 Plastic-Encapsulated
Transistors
2SB1308
FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO:
TRANSISTOR (
PNP)
SOT-89
1. BASE
0.5 -3 -30
W (Tamb=25℃) A V
2. COLLECTOR 1 3. EMITTER 2 3
Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency * Measured using pulse current.
unless otherwise specified)
Test conditions MIN -30 -20 -6 -0.5 -0.5 82 390 -0.45 50 V MHz MAX UNIT V V V µA µA
Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE * VCEsat *
Ic=-50µA , IE=0 IC= -1mA , IB=0 IE=-50µA, IC=0 VCB=-20 V , IE=0 VEB=-5 V , IC=0
VCE=-2V, IC= -0.5A IC=-1.5A, IB= -0.15A VCE= -6V, IC=-50mA f =30MHz
fT
CLASSIFICATION OF hFE Rank Range
P 82-180
Q 120-270
R 180-390
Marking
BFP,BFQ,BFR
Free Datasheet http://www.datasheet4u.com/
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