2SB1197K

Elektronische Bauelemente 2SB1197K -0.8A, -40V PNP Epitaxial Planar Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES Low VCE(sat).VCE(sat)≦ -0.5V (IC / IB= -0.5A /-50mA) IC= -0.8A MECHANICAL DATA Case: SOT-23 CLASSIFICATION OF hFE Product-Rank 2SB1197K-Q Range 120~270 Marking AHQ 2SB1197K-R 180~390 AHR PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch SOT-23 A L 3 Top View CB 12 KE 3 1 2 D F GH J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.10 2.65 1.20 1.40 0.89 1.17 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.09 0.18 0.35 0.65 0.08 0.20 0.6 REF. 0.95 BSC. ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Collector to Base Voltage VCBO -40 Collector to Emitter Voltage VCEO -32 Emitter to Base Voltage VEBO -5 Collector Current IC -800 Total Power Dissipation PD 200 Junction and Storage Temperature TJ, TSTG 150, -55~150 Unit V V V mA mW °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector Output Capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT COB Min. -40 -32 -5 120 50 - Typ. - 200 12 Max. - -0.5 -0.5 -0.5 390 30 Unit V V V µA µA V MHz pF Test C...