2SB1184-P

MCC Micro Commercial Components 2SB1184-P TM
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SB1184-Q 2SB1184-R PNP Silicon Epitaxial Transistors Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 Low Collector Saturation Voltage Execllent current-to-gain characteristics o Maximum Thermal Resistance: 125 C/W Junction to Ambient Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating -50 -60 -5.0 -3.0 1.0 150 -55 to +150 Unit V V V A W к к Maximum Ratings C DPAK J H 1 O 2 I 3 M K V F E Electrical Characteristics @ 25к Unless Otherwise Specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) fT Cob Parameter Collector-base Breakdown Voltage (IC=-50uAdc, IE=0) Collector-Emitter Breakdown Voltage (IC=-1mAdc, IB=0) Emitter-base Breakdown Voltage (IE=-50uAdc, IC=0) Collector-Base Cutoff Current (VCB=-40Vdc,IE=0) Emitter-Base Cutoff Current (VEB=-4Vdc, IC=0) DC Current Gain (IC=-0.5Adc, VCE=-3.0Vdc) Collector-Emitter Saturation Voltage (IC=-2Adc, IB=-200mAdc) Transition Frequency (VCE=-5Vdc, IC=-500mAdc,f=30MHz) Collector output capacitance (VCB=-10Vdc, IE=0,f=1.0MHz) Min -60 -50 -5 ----82 --Typ --------------...