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2SB1182D

SeCoS
Part Number 2SB1182D
Manufacturer SeCoS
Description PNP Transistor
Published Oct 29, 2013
Detailed Description 2SB1182D PNP Silicon Elektronische Bauelemente General Purpose Transistor TO-252 6. 50Ć0. 15 FEATURES The 2SB1182DX is...
Datasheet PDF File 2SB1182D PDF File

2SB1182D
2SB1182D

Overview
2SB1182D PNP Silicon Elektronische Bauelemente General Purpose Transistor TO-252 6.
50Ć0.
15 FEATURES The 2SB1182DX is designed for medium power amplifier application 9.
70Ć0.
20 0.
75Ć0.
10 5.
30Ć0.
10 2.
30Ć0.
10 0.
51Ć0.
05 C Low collector saturation voltage: VCE(sat)=-0.
5V (Typ.
) RoHS Compliant Product 5 0.
51Ć0.
10 1.
20 0Ć0.
10 5 0.
80Ć0.
10 5 1.
60Ć0.
15 2.
30Ć0.
10 0.
60Ć 0.
10 0 Ć9 0.
51 B O C E 2.
30Ć0.
10 * MAXIMUM RATINGS* TA=25 C unless otherwise noted Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Current -Pulse,Pw=100mS Collector Dissipation Junction and Storage Temperature Symbol VCBO VCE...


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