2SB1176

SMD Type Silicon PNP Epitaxial Planar Type 2SB1176 Features Low collector-emitter saturation voltage VCE(sat). Satisfactory linearity of forward current transfer ratio hFE. Large collector current IC. 6.50 +0.2 5.30-0.2 +0.15 -0.15 Transistors TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -130 -80 -7 -5 -10 1.3 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector-emitter voltage Collector-emitter cutoff curent Emitter-base cutoff current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol VCEO ICEO IEBO hFE Testconditons IC = -10 mA, IB = 0 VCE = -100 V,IB = 0 VEB = -5 V, IC = 0 VCE = -2 V, IC = -2 A VCE = -2 V, IC = -0.1 A VCE(sat) IC = -4 A, IB = -0.2 A VBE(sat) IC = -4 A, IB = -0.2 A fT ton tstg tf IC = -2 A,IB1 = -0.2 A,IB2 = 0.2 A, VCC = -50 V VCE = -10 V, IC = -0.5 A , f = 10 MHz 30 0.13 0.5 0.13 90 45 -0.5 -1.5 V V MHz ìs ìs ìs Min -80 -10 -50 260 Typ Max Unit V ìA...