Power Transistors
2SB1169, 2SB1169A
Silicon PNP epitaxial planar type
For power amplification
Unit : mm
■ Features
• H...
Power
Transistors
2SB1169, 2SB1169A
Silicon
PNP epitaxial planar type
For power amplification
Unit : mm
■ Features
High forward current transfer ratio hFE which has satisfactory linearity Low collector-emitter saturation voltage VCE(sat) I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.
7.0±0.3 3.0±0.2 2.0±0.2
3.5±0.2
0˚ to 0.15˚
2.5±0.2
(1.0)
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) 2SB1169 2SB1169A VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Junction temperature Storage temperature Symbol VCBO Rating −60 −80 −60 −80 −5 −1 −2 15 1.3 150 −55 ∼ +150 °C °C V A A W V Unit V
12.6±0.3 7.2±0.3
(1.0)
1.1±0.1
1.0±0.2
0.75±0.1 0.4±0.1 2.3±0.2 4.6±0.4 1 2 3
0.9±0.1 0˚ to 0.15˚
Collector-emitter voltage 2SB1169 (Base open) 2SB1169A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation
1: Base 2: Collector 3: Emitter I-G1 Package
Note) Self-supported type package is also prepared.
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-emitter cutoff current (E-B short) Collector-emitter cutoff current (Base open) 2SB1169 2SB1169A 2SB1169 2SB1169A IEBO hFE1 * hFE2 Collector-emitter saturation voltage Transition frequency Turn-on time Strage time Fall time VCE(sat) fT ton tstg tf ICEO 2SB1169 2SB1169A VBE ICES VCE = −4 V, IC = −1 A VC...