2SB1132PT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP Medium Power Transistor VOLTAGE 32 Volts APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. 2SB1132 PT CURRENT 1 Ampere FEATURE * Small flat package. ( SC-62/SOT-89 ) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. 4.6MAX. 1.7MAX. SC-62/SOT-89 1.6MAX. 0.4+0.05 2.5+0.1 +0.08 0.45-0.05 +0.08 0.40-0.05 1.50+0.1 +0.08 0.40-0.05 1.50+0.1 MARKING * HFE(P):P32 * HFE(Q):Q32 * HFE(R):BAR 1 1 Base 2 3 CIRCUIT 2 Collector ( Heat Sink ) 3 Emitter 0.8MIN. 4.6MAX. 1 B 2 C 3 E Dimensions in millimeters SC-62/SOT-89 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL V CBO V CEO VEBO IC PC PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) Collector power dissipation Note2 Tstg Tj Note 1. Transistor mounted on an FR4 printed-circuit board. 2. When mounted on a 40X40X0.7 mm ceramic board. storage temperature junction temperature CONDITIONS open emitter open base open collector − − − − − − −55 − MIN. MAX. -40 -32 -5 -1 0.5 2 +150 150 °C °C UNIT V V V A W 2004-03 Free Datasheet http://www.datasheet4u.com/ RATING CHARACTERISTIC ( 2SB1132PT) THERMAL CHARACTERISTICS CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL IEBO ICBO BVCBO BVCEO BVEBO hFE VCEsat Cob fT Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02...