2SB1122

SMD Type Transistors PNP Epitaxial Planar Silicon Transistors 2SB1122 Features Adoption of FBET process.. Very small size making it easy to provide highdensity hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -60 -50 -5 -1 -2 500 150 -55 to +150 Unit V V V A A mW www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.com SMD Type 2SB1122 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Turn-on time Symbol ICBO IEBO hFE fT Cob Testconditons VCB = -50V , IE = 0 VCB = -4V , IE = 0 VCE = -2V , IC = -100mA VCE = -10V , IC = -50mA VCB = -10V , f = 1MHz Transistors Min Typ Max -100 -100 Unit nA nA 100 150 12 -180 -0.9 -60 -50 -5 40 560 MHz pF -500 -1.2 V V V V V ns VCE(sat) IC = -500mA , IB = -50mA VBE(sat) IC = -500mA , IB = -50mA V(BR)CBO IC = -10ìA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10ìA , IC = 0 ton Storage time tstg 300 ns Fall time tf 30 ns hFE Classification Marking Rank hFE 100 R 200 140 S 280 200 BE T 400 280 U 560 2 www.kexin.com.cn Fre...