2SB1120

SMD Type Transistors PNP Epitaxial Planar Silicon Transistors 2SB1120 Features Low collector-to-emitter saturation voltage : VCE(sat)max=-0.45V. Large current capacity : IC=-2.5A, ICP=-5A. Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -20 -10 -7 -2.5 -5 500 150 -55 to +150 Unit V V V A A mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Collector-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Output capacitance Symbol ICBO IEBO hFE fT Testconditons VCB = -16V , IE = 0 VCB = -4V , IE = 0 VCE = -2V , IC = -500mA VCE=-2V IC=-3A 100 70 250 -0.25 -0.45 -20 -10 -7 70 MHz V V V V pF Min Typ Max -100 -100 560 Unit nA nA VCE = -10V , IC = -50mA VCE(sat) IC = -1.5A , IB = -0.15A V(BR)CBO IC = -10ìA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10ìA , IC = 0 Cob VCB = -10V , f = 1MHz hFE Classification Marking Rank hFE E 100 200 BC F 160 320 G 280 560 www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.com/ ...