2N3700

TECHNICAL DATA LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Devices 2N3019 2N3019S 2N3057A 2N3700 2N3700S Qualified Level JAN JANTX JANTXV JANS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C(1) 2N3019; 2N3019S 2N3057A 2N3700 2N3700UB @ TC = +250C(2) 2N3019; 2N3019S 2N3057A 2N3700 2N3700UB Operating & Storage Jct Temp Range Symbol VCEO VCBO VEBO IC PT TJ, Tstg Value 80 140 7.0 1.0 0.8 0.4 0.5 0.4 5.0 1.8 1.8 1.16 -55 to +175 Units Vdc Vdc Vdc Adc W W 0C TO-39* (TO-205AD) 2N3019, 2N3019S TO- 18* (TO-206AA) 2N3700 TO-46* (TO-206AB) 2N3057A 1) Derate linearly 4.6 mW/0C for type 2N3019 and 2N3019S; 2.3 mW/0C for type 2N3057A; 2.85 mW/0C for type 2N3700; 6.6 mW/0C for type 2N3700UB for TA ≥ +250C. 2) Derate linearly 28.6 mW/0C for type 2N3019 and 2N3019S; 10.3 mW/0C for types 2N3057A, 2N3700, & 2N3700UB for TC ≥ +250C. 3 PIN SURFACE MOUNT* 2N3700UB *See appendix A for package ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) outline Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC = 100 µAdc V(BR)CBO 140 Vdc Emitter-Base Breakdown Voltage IE = 100 µAdc V(BR)EBO 7.0 Vdc Collector-Emitter Breakdown Current IC = 30 mAdc V(BR)CEO 80 Vdc 6 Lake Street, Lawrence, MA 01841 120101 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Page 1 of 2 2N3019, 2N3019S, 2N3057A, 2N3700...