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VB40170C Dataheets PDF



Part Number VB40170C
Manufacturers Vishay
Logo Vishay
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet VB40170C DatasheetVB40170C Datasheet (PDF)

VB40170C www.vishay.com Vishay General Semiconductor Ultra Low VF = 0.52 V at IF = 5 A Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS ® TO-263AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K 1 VB40170C PIN 1 PIN 2 K HEATSINK • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For u.

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VB40170C www.vishay.com Vishay General Semiconductor Ultra Low VF = 0.52 V at IF = 5 A Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS ® TO-263AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K 1 VB40170C PIN 1 PIN 2 K HEATSINK • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. 2 x 20 A 170 V 200 A 0.68 V 175 °C Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode IF(AV) IFSM dV/dt TJ, TSTG SYMBOL VRRM VB40170C 170 40 A 20 200 10 000 - 40 to + 175 A V/μs °C UNIT V Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Voltage rate of change (rated VR) Operating junction and storage temperature range Revision: 11-Jul-12 Document Number: 89949 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Free Datasheet http://www.datasheet4u.com/ VB40170C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5 A IF = 10 A Instantaneous forward voltage per diode IF = 20 A IF = 5 A IF = 10 A IF = 20 A VR = 136 V Reverse current per diode VR = 170 V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  20 ms TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C IR (2) TA = 125 °C TA = 25 °C VF (1) SYMBOL TYP. 0.66 0.75 0.86 0.52 0.59 0.68 1.3 2.2 4.2 MAX. 1.20 0.76 250 50 μA mA μA mA V UNIT THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER per diode Typical thermal resistance per device RJC SYMBOL VB40170C 1.2 °C/W 0.85 UNIT ORDERING INFORMATION (Example) PACKAGE TO-263AB TO-263AB PREFERRED P/N VB40170C-E3/4W VB40170C-E3/8W UNIT WEIGHT (g) 1.38 1.38 PACKAGE CODE 4W 8W BASE QUANTITY 50/tube 800/reel DELIVERY MODE Tube Tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Average Forward Rectified Current (A) 22 20 18 16 14 12 10 8 6 4 2 0 0 25 50 75 100 125 150 175 0.0 0 5 10 15 20 25 20.0 D = 0.


SI5338 VB40170C 2SK2503


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