KTC4376

SMD Type Transistors Diodes IC Transistor T Product specification KTC4376 SOT-89 4.50±0.1 1.80±0.1 Unit:mm 1.50 ±0.1 ■ Features ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=800mA 1 0.48±0.1 2 3 0.80±0.1 0.44±0.1 0.53±0.1 3.00±0.1 0.40±0.1 2.60±0.1 2.50±0.1 4.00±0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector-base voltage Collector-Emitter voltage Emitter-base voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 35 30 5 800 500 150 -55 to 150 Unit V V V mA mW ℃ ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Collector-base breakdown voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition frequency Collector Output Capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE fT Cob Test conditons IC= 1mA, IE=0 IC=10mA, IB=0 IE=1mA, IC=0 VCB=35V, IE=0 VEB=5V, IC=0 VCE=1V, IC=100mA VCE=1V, IC=700mA IC=500mA, IB=20mA VCE=1V, IC=10mA VCE=5V, IC=10mA VCB=10V, IE=0, f=1MHz 120 13 100 35 0.5 0.8 V V MHz pF Min 35 30 5 100 100 320 Typ Max Unit V V V nA nA ■ hFE Classification Marking Rank Range PO O 100～200 PY Y 160 ～320 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1 Free Datasheet http://www.datasheet4u.com/ ...