2N3637

2N3637 MECHANICAL DATA Dimensions in mm (inches) 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) PNP SILICON TRANSISTOR 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) FEATURES High Voltage Switching 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia . 1 2 .7 0 (0 .5 0 0 ) m in . Low Power Amplifier Applications Hermetic TO39 Package 5 .0 8 (0 .2 0 0 ) ty p . 1 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) 2 3 2 .5 4 (0 .1 0 0 ) APPLICATIONS: General Purpose High Speed Saturated Switching 4 5 ° TO–39 METAL PACKAGE Underside View PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCEO VCBO VEBO IC PD PD TJ , TSTG Collector – Emitter Voltage Collector – Base Voltage Emmiter – Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range 175V 175V 5V 1A 1W 5.71mW/ °C 5W 28.6mW / °C –65 to +200°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim. 7/99 2N3637 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions OFF CHARACTERISTICS BVCEO BVCBO BVEBO IEBO ICBO Collector–Emitter Breakdown Voltage1 IC = 10mA Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Emitter Cut-off C...