Document
SMD Type
Transistors IC
PNP Epitaxial Planar Silicon Transistors 2SB815
SOT-23
Unit: mm
Features
Ultrasmall package allows miniaturization in end products.
+0.1 2.4-0.1
+0.1 2.9-0.1 +0.1 0.4-0.1
+0.1 1.3-0.1
Large current capacity (IC=0.7A) and low-saturation voltage.
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -20 -15 -5 -0.7 -1.5 200 125 -55 to +125 Unit V V V A A mW
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Symbol IcBO IEBO hFE fT Cob Testconditons VCB = -15V , IE = 0 VEB = -4V , IC = 0 VCE = -2V , IC = -50mA VCE = -10V , IC = -50mA VCB = -10V , f = 1MHz 200 250 13 -15 -60 -35 -120 Min Typ Max -0.1 -0.1 600 MHz pF mV mV Unit ìA ìA
VCE(sat) IC = -5mA , IB = -0.5mA VCE(sat) IC = -100mA , IB = -10mA
hFE Classification
Marking hFE B6 200 400 B7 300 600
+0.1 0.38-0.1
0-0.1
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1
Free Datasheet http://www.datasheet4u.com/
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