DC COMPONENTS CO., LTD.
R
2SB857
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
...
DC COMPONENTS CO., LTD.
R
2SB857
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF
PNP EPITAXIAL PLANAR
TRANSISTOR
Description
Designed for low frequency power amplifier.
TO-220AB
Pinning
1 = Base 2 = Collector 3 = Emitter
.405(10.28) .380(9.66) .185(4.70) .173(4.40) Φ.151 Typ .055(1.39) Φ(3.83) .045(1.15) .295(7.49) .220(5.58)
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (continuous) Collector Current (peak) Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature
o
Symbol VCBO VCEO VEBO IC IC PD TJ TSTG
Rating -70 -50 -5 -4 -8 40 +150 -55 to +150
Unit V V V A A W
o o
.625(15.87) .570(14.48) 1 2 3
.350(8.90) .330(8.38)
.640 Typ (16.25)
.055(1.40) .045(1.14) .037(0.95) .030(0.75)
.562(14.27) .500(12.70)
.100 Typ (2.54)
.024(0.60) .014(0.35)
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO VCE(sat) VBE(on) hFE1 hFE2 fT 380µs, Duty Cycle 2%
Min -70 -50 -5 35 60 -
Typ 15
Max -1 -1 -1 320 -
Unit V V V µA V V MHz
Test Conditions IC=-10µA, IE=0 IC=-50mA, IB=0 IE=-10µA, IC=0 VCB=-50V, IE=0 IC=-2A, IB=-0.2A IC=-1A, VCE=-4V IC=-0.1A, VCE=-4V IC=-1A, VCE=-4V IC=-500mA, VCE=-4V, f=100MHz
Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector...