isc Silicon PNP Power Transistor
2SB855
DESCRIPTION ·Collector Current: IC= -2A ·Low Collector Saturation Voltage
: VC...
isc Silicon
PNP Power
Transistor
2SB855
DESCRIPTION ·Collector Current: IC= -2A ·Low Collector Saturation Voltage
: VCE(sat)= -1.2V(Max)@IC= -2A ·High Collector Power Dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-50
V
VCEO Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-4
V
IC
Collector Current-Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-2
A
20
W
150
℃
Tstg
Storage Temperature Range
-45~150 ℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= -5mA ; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -5mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A
VBE(on) Base-Emitter On Voltage
IC= -1A; VCE= -4V
ICBO
Collector Cutoff Current
VCB= -20V; IE= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -4V
hFE-2
DC Current Gain
IC= -0.1A; VCE= -4V
fT
Current-Gain—Bandwidth Product
IC= -0.5A; VCE= -4V
hFE-1 Classifications
A
B
C
35-70 60-120 100-200
2SB855
MIN TYP. MAX UNIT
-50
V
-50
V
-4
V
-1.2
V
-1.5
V
-10...