2SB852

Product specification 2SB852 ■ Features ● Darlington connection for high DC current gain. ● Built-in 4kΩ resistor between base and emitter. +0.1 2.4-0.1 +0.1 1.3-0.1 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 C 0.4 3 +0.05 0.1-0.01 B +0.1 0.97-0.1 1 Base 2 Emitter RBE 4kΩ +0.1 0.38-0.1 E ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation(TOTAL) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -40 -32 -6 -300 200 150 -55 to 150 Unit V V V mA mW ℃ ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Collector cutoff current Collector cutoff current DC current gain Collector-emitter saturation voltage Transition frequency Output capacitance Symbol Test conditions Min -40 -32 -6 -1 -1 5000 -1.5 200 3 V MHz PF Typ Max Unit V V V μA μA V(BR)CBO Ic= -100μA, IE=0 V(BR)CEO Ic= -1 mA， IB=0 V(BR)EBO IE= -100 μA， IC=0 IcBO IEBO hFE VCB= -24 V , IE=0 VCE= -4.5V , IC=0 VCE= -5V, IC= -100mA VCE(sat) IC=-200 mA, IB= -0.4mA fT Cob VCE= -5V, IC= -10mA,f=100MHz VCB=-10V, IE=0A, f=1MHz ■ Marking Marking U* 0-0.1 3 Collector http://www.twtysemi.com sales@twtysemi.com 4008-318-123 1 of 2 Free Datasheet http://www.datasheet4u.com/ Product specification 2SB852 ■ Typlacl Character...