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2SB900

Part Number	2SB900
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Oct 25, 2013
Detailed Description	isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB900 DESCRIPTION ·Collector-Emitter BreakdownVoltage- : V(BR...
Datasheet	2SB900 PDF File

Overview

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB900 DESCRIPTION ·Collector-Emitter BreakdownVoltage- : V(BR)CEO= -50V(Min.
) ·Low Collector Saturation Voltage- : VCE(sat)= -1.
0(Max.
) @IC= -2A ·Wide area of safe operation ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and switching applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -6 A PC Collector Power Dissipation...

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