2SB947

isc Silicon PNP Power Transistor 2SB947 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.6V(Max)@IC= -7A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -15 A 2 W 35 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -0.23A VBE(sat) Base-Emitter Saturation Voltage IC= -7A; IB= -0.23A ICBO Collector Cutoff Current VCB= -40V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -0.1A; VCE= -2V hFE-2 DC Current Gain IC= -2A; VCE= -2V  hFE-1 Classifications Q P 90-180 130-260 2SB947 MIN TYP. MAX UNIT -20 V -0.6 V -1.5 V -50 μA -50 μA 45 90 260 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet...