2SB946

isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@IC= -5A ·Good Linearity of hFE ·Large Collector Current IC ·Complement to Type 2SD1271 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -15 A 2 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB946 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.25A VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -0.25A ICBO Collector Cutoff Current VCB= -100V ; IE= 0 IEBO Emitter Cutoff Current VEB= -5V ; IC=0 hFE-1 DC Current Gain IC= -0.1A ; VCE= -2V hFE-2 DC Current Gain IC= -3A ; VCE= -2V  hFE-2 Classifications Q P 90-180 130-260 2SB946 MIN TYP. MAX UNIT -80 V -0.5 V -1.5 V -10 μA -50 μA 45 90 260 NOTICE： ISC reserves the righ...