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2SB944

Silicon PNP Power Transistor

Description

isc Silicon PNP Power Transistor 2SB944 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@ IC= -3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V (Min) ·Good Linearity of hFE ·Complement to Type 2SD1269 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplificati...

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