isc Silicon PNP Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -0.5V(Max)@IC= -2A ·Good Li...
isc Silicon
PNP Power
Transistor
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -0.5V(Max)@IC= -2A ·Good Linearity of hFE ·Complement to Type 2SD1268 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-130
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-3
A
ICM
Collector Current-Peak
Collector Power Dissipation @ Ta=25℃
PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-6
A
2 W
30
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SB943
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isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.1A
VBE(sat) Base-Emitter Saturation Voltage
IC= -2A; IB= -0.1A
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -0.1A; VCE= -2V
hFE-2
DC Current Gain
IC= -0.5A; VCE= -2V
hFE-1 Classifications
Q
P
90-180 130-260
2SB943
MIN TYP. MAX UNIT
-80
V
-0.5 V
-1.5 V
-10 μA
-50 μA
45
90
260
NOTICE: ISC reserves the rights to make changes of the conten...