isc Silicon PNP Power Transistor
2SB941
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -1.2V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1266 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low-frequency power amplifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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