2SB950A

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 2000(Min.)@IC= -3A ·High Speed Switching ·Complement to Type 2SD1276A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 2 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB950A isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB950A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -12mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -5A; IB= -20mA VBE(on) Base-Emitter On Voltage IC= -3A ; VCE= -3V ICBO Collector Cutoff Current VCB= -100V ; IE= 0 ICEO Collector Cutoff Current VCE= -40V ; IB= 0 IEBO Emitter Cutoff Current VEB= -5V ; IC= 0 hFE-1 DC Current Gain IC= -0.5A ;VCE= -3V hFE-2 DC Current Gain IC= -3A ; VCE= -3V MIN TYP. MAX UNIT -80 V -2.0 V -4.0 V ...