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2SB966
Silicon PNP Power Transistors
Description
isc Silicon
PNP
Power
Transistor
INCHANGE Semiconductor 2SB966 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= -0.65V(Typ)@IC= -5.0A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Complement to Type 2SD1289 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio...
Inchange Semiconductor
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