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2SB965

Part Number	2SB965
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistors
Published	Oct 25, 2013
Detailed Description	isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB965 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat...
Datasheet	2SB965 PDF File

Overview

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB965 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= -0.
55V(Typ)@IC= -4.
0A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Complement to Type 2SD1288 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICP Collector Current-Pulse -10 A PC Total Power Dissipation @ Tc=25℃ 70...

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