SMD Type
PNP Transistors 2SB962-Z
Transistors
■ Features
● Low collector to emitter saturation voltage VCE(sat).
+ 1...
SMD Type
PNP Transistors 2SB962-Z
Transistors
■ Features
● Low collector to emitter saturation voltage VCE(sat).
+ 1.50 0.15 -0.15
TO-252
6.50+0.15 -0.15
5.30+0.2 -0.2
2.30 +0.1 -0.1
0.50 +0.8 -0.7
Unit: mm
3.80
+ 5.55 0.15 -0.15
0.80+0.1 -0.1
0.127 m ax
+ 0.25 2 .6 5 -0.1
+ 0.15 0 .5 0 -0.15
+ 0.28 1 .5 0 -0.1
+0 9.70 .2 -0.2
2.3 4 .60 +0.15
-0.15
0.60+ 0.1 - 0.1
1 Base 2 Collector 3 Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector current -Pulse Collector Power Dissipation Junction Temperature Storage Temperature range
(Note.1)
Symbol
Rating
Unit
VCBO
-40
VCEO
-30
V
VEBO
-5
IC
-3
A
ICP
-6
PC
2
W
TJ
150
℃
Tstg
-55 to 150
Note.1: PW ≤ 10ms,Duty Cycle ≤ 50℅
■ Electrical Characteristics Ta = 25℃
Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage
DC current gain
Collector output capacitance Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -30V , IE=0
IEBO VEB= -4V , IC=0
VCE(sat) IC=-2 A, IB=-200mA (Note.1)
VBE(sat) IC=-2 A, IB=-200mA (Note.1)
hFE(1) VCE= -2V, IC= -20mA (Note.1)
hFE(2) VCE= -2V, IC= -1 A (Note.1)
Cob VCB = –10V, IE = 0, f = 1MHz
...
