BL Galaxy Electrical
PNP Silicon Epitaxial Planar Transistor
FEATURES
z z z z High voltage VCEO=-50V. Excellent HFE Line...
BL Galaxy Electrical
PNP Silicon Epitaxial Planar
Transistor
FEATURES
z z z z High voltage VCEO=-50V. Excellent HFE Linearity. High DC current gain : hFE=200 typ. Complementary to 2SC4177.
Production specification
2SA1611W
Pb
Lead-free
APPLICATIONS
z Audio frequency general purpose amplifier applications. SOT-323
ORDERING INFORMATION
Type No. 2SA1611W Marking M4/M5/M6/M7 Package Code SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Value -60 Units V
Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous
-50 -5 -100
V V mA
Collector Dissipation Junction and Storage Temperature
150 -55~150
mW ℃
Document number: BL/SSSTF033 Rev.A
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Free Datasheet http://www.datasheet4u.com/
BL Galaxy Electrical
PNP Silicon Epitaxial Planar
Transistor
Production specification
2SA1611W
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test conditions IC=-100μA,IE=0 IC=-1mA,IB=0 IE=-100μA,IC=0 VCB=-60V,IE=0 VEB=-5V,IC=0 VCE=-6V,IC=-1mA IC=-100mA, IB=-10mA VCE=-6V, IC= -10mA VCB=-10V,IE=0,f=1MHz 180 4.5 90 200 -0.18 MIN -60 -50 -5 -...