2SA1576F
PNP Silicon
Elektronische Bauelemente
RoHS Compliant Product
General Purpose Transistor
Feature
·
Complement...
2SA1576F
PNP Silicon
Elektronische Bauelemente
RoHS Compliant Product
General Purpose
Transistor
Feature
·
Complements the 2SC4081F
SOT-323 Dim A
A
Min 1.800 1.150 0.800 0.300 1.200 0.000 0.100 0.350 0.590 2.000 0.280
Max 2.200 1.350 1.000 0.400 1.400 0.100 0.250 0.500 0.720 2.400 0.420
B
L B S
COLLECTOR
C D
2
3
3
Top View 1
BASE
1
G H J K
V 2
EMITTER 1 2 3
G C D H K J
L S V
Marking Code: 5AX
X = hFE Rank Code
All Dimension in mm
Absolute Maximum Ratings at Ta = 25к
Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55~+150 -60 -50 -6 -150 225 Unit ć ć V V V mA mW
Characteristics at Ta = 25к
Parameter
Collector -Base Breakdown Voltage Collector -Emitter Breakdown Voltage Emitter -Base Breakdown Voltage Collector -Emitter Breakdown Voltage Emitter -Base Cutoff Current Collector Saturation Voltage 1 DC Current Gain Gain-Bandwidth Product Output Capacitance
Symbol
BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob
Min
-60 -50 -6 120 -
Typ.
140 4.0
Max
-100 -100 -500 560 5.0
Unit
V V V nA nA mV MHz pF
Test Conditions
IC=-50uA IC=-1mA IE=-50uA VCB=-60V VEB=-6V IC=-50mA, IB=-5mA VCE=-6V, IC=-1mA VCE=-12V, IE=-2 mA, f=100MHz VCB=-12V, f=1MHz, IE=0
*Pulse Test: Pulse Width = 380us, Duty Cycle = 2%
Classification of hFE
Rank Q R S
Range
120 - 270
180 - 390
270 - 560
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