2N3570

2N3570 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N3570 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. MAXIMUM RATINGS IC VCB VCE VEB PDISS TJ TSTG θJC O O PACKAGE STYLE TO- 72 50 mA 30 V 15 V 3.0 V 200 mW @ TC = 25 C -65 C to +200 C -65 C to +200 C 500 C/W O O O O 1 = EMITTER 3 = COLLECTOR 2 = BASE 4 = CASE CHARACTERISTICS SYMBOL BVCEO BVCBO ICBO BVEBO hFE Cob hFE hfe rb´CC POSC NF IC = 2 mA IC = 1.0 µA VCB = 6.0 V TC = 25 C O NONE TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 15 30 10 TA = 150 C O UNITS V V µA V 1.0 3.0 20 150 0.75 20 150 4.25 5 60 6 7 6 8 3.75 1 --pF ----pF mW dB IE = 10 µA VCE = 6.0 V VCB = 6 V VCE = 6 V VCE = 6 V VCB = 6 V VCC = 20 V VCB = 6 V IC = 5 mA IC = 5 mA IE = -5 mA IC = 15 mA IC = 2 mA RG = 50 Ω f = 400 MHz f = 79.8 MHz f = 1.0 GHz f = 1.0 GHz IC = 5.0 mA f = 1.0 MHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...