2SA1468

SMD Type Silicon PNP Epitaxial 2SA1468 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 High voltage amplifier. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -180 -180 -5 -100 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage DC current transfer ratio Collector to emitter saturation voltage Base emitter voltage Gain bandwidth product Collector output capacitance Symbol Testconditons Min -180 -180 -5 100 320 -0.5 -1 200 3.5 V V MHz pF Typ Max Unit V V V V(BR)CBO IC = -10 ìA, IE = 0 V(BR)CEO IC = -0.5 mA, RBE = V(BR)EBO IE = -10 ìA, IC = 0 hFE VCE = -12 V,IC = -2 mA VCE(sat) IC = -30 mA,IB = -3 mA VBE fT Cob VCE = -12 V, IC = -2 mA VCE = -12 V,IC = -10 mA VCB = -10 V, IE = 0,f = 1 MHz hFE Classification Marking Rank hFE INB B 100 200 INC C 160 320 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.com/ ...