2N3553

DISCRETE SEMICONDUCTORS DATA SHEET 2N3553 Silicon planar epitaxial overlay transistor Product specification Supersedes data of October 1981 File under Discrete Semiconductors, SC08a 1995 Oct 27 Philips Semiconductors Product specification Silicon planar epitaxial overlay transistor APPLICATIONS The 2N3553 is intended for use in VHF and UHF transmitting applications. PINNING - TO-39/3 PIN 1 2 3 base collector handbook, halfpage 2N3553 DESCRIPTION The device is a silicon NPN overlay transistor in a TO-39 metal package with the collector connected to the case. DESCRIPTION emitter 1 2 MBB199 3 Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL VCEX VCEO ICM Ptot Tj fT PARAMETER collector-emitter voltage collector-emitter voltage peak collector current total power dissipation junction temperature transition frequency IC = 125 mA; VCE = 28 V up to Tmb = 25 °C CONDITIONS IC ≤ 200 mA; VBE = −1.5 V open base; IC ≤ 200 mA 65 40 1.0 7.0 200 500 MAX. V V A W °C − UNIT RF performance f (MHz) 175 VCE (V) 28 Po (W) 2.5 Gp (dB) >10 η (%) >50 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out ...