2SA1419

SMD Type High-Voltage Switching Applications 2SA1419 Transistors Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Jumction temperature Storage temperature Range * Mounted on ceramic board (250 mm2 x 0.8 mm) Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg Rating -180 -160 -6 -1.5 -2.5 500 1.5 150 -55 to +150 Unit V V V A A mW W Electrical Characteristics Ta = 25 Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Gain-Bandwidth Product Collector Output Capacitance Turn-On Time Storage Time Fall Time Symbol ICBO IEBO Testconditons VCB = -120V , IE = 0 VEB = -4V , IC = 0 -180 -160 -6 100 80 -0.2 -0.85 120 22 40 See Test Circuit. 0.7 40 -0.5 -1.2 V V MHz pF ns us ns 400 Min Typ Max -1 -1 Unit uA uA V V V V(BR)CBO IC = -10uA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10uA , IC = 0 hFE VCE = -5V , IC = -100mA VCE = -5V , IC = -10mA VCE(sat) IC = -500mA , IB = -50mA VBE(sat) IC = -500mA , IB = -50mA fT Cob ton tstg tf VCE = -10V , IC = -50mA VCB = -10V , IE = 0 , f = 1MHz www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.com/ SMD Type 2SA1419 Test C...