2SA1417

SMD Type Product specification 2SA1417 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Jumction temperature Storage temperature Range * Mounted on ceramic board (250 mm x 0.8 mm) 2 Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg Rating -120 -100 -6 -2 -3 500 1.5 150 -55 to +150 Unit V V V A A mW W Electrical Characteristics Ta = 25 Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Gain-Bandwidth Product Collector Output Capacitance Turn-On Time Storage Time Fall Time Symbol ICBO IEBO Testconditons VCB = -100V , IE = 0 VEB = -4V , IC = 0 -120 -100 -6 100 -0.22 -0.85 120 25 80 See Test Circuit. 750 40 ns 400 -0.6 -1.2 V V MHz pF Min Typ Max -100 -100 Unit nA nA V V V V(BR)CBO IC = -10uA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10uA , IC = 0 hFE VCE = -5V , IC = -100mA VCE(sat) IC = -1A , IB = -100mA VBE(sat) IC = -1A , IB = -100mA fT Cob ton tstg tf VCE = -10V , IC = -100mA VCB = -10V , IE = 0 , f = 1MHz 1 http://www.twtysemi.com [email protected] 4008-318-123 1 of 3 Free Datasheet http://www.datasheet4u.com/ SMD Type Product specification 2S...