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STW12NK90Z
N-channel 900V - 0.72Ω - 11A - TO-247 Zener-protected SuperMESH™ Power MOSFET
General features
Type STW12NK90Z
■ ■ ■ ■ ■
VDSS 900V
RDS(on) <0.88Ω
ID 11A
pW 230W
Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatibility
TO-247
Description
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number STW12NK90Z Marking W12NK90Z Package TO-247 Packaging Tube
October 2006
Rev 5
1/14
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Contents
STW12NK90Z
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) ............................. 7
3 4 5
Test circuit
................................................ 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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STW12NK90Z
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VGS ID ID IDM
(1)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5KΩ) Single pulse avalanche energy Storage temperature -55 to 150 Max. operating junction temperature °C Value 900 ± 30 11 7 44 230 1.85 6000 4.5 Unit V V A A A W W/°C V mJ
Ptot
VESD(G-S) EAS
(2)
Tstg Tj
2.
1. Pulse width limited by safe operating area. ISD ≤ 11A, di/dt ≤ 200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.
Table 2.
Rthj-case Rthj-amb TJ
Thermal data
Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose 0.54 50 300 °C/W °C/W °C
Table 3.
Symbol IAR EAS
Avalanche characteristics
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max value 11 500 Unit A mJ
Table 4.
Symbol BVGSO
Gate-source zener diode
Parameter Gate-source breakdown voltage Test conditions Igs=± 1mA (open drain) Min. 30 Typ. Max. Unit V
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Electrical ratings
STW12NK90Z
1.1
Protection features of gate-to-source zener diodes
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.
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STW12NK90Z
Electrical characteristics
2
Electrical characteristics
(TCASE=25°C unless otherwise specified) Table 5.
Symbol V(BR)DSS
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1mA, VGS =0 VDS = max rating VDS = max rating, TC = 125°C VGS = ± 20V VDS = VGS, ID = 100µA VGS = 10V, ID = 5.5A 3 3.75 0.72 Min. 900 1 50 ±10 4.5 0.88 Typ. Max. Unit V µA µA µA V Ω
IDSS
IGSS VGS(th) RDS(on)
Table 6.
Symbol gfs (1) Ciss Coss Crss Coss eq(2) td(on) tr td(off) tf Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 15V, ID = 5.5A Min. Typ. 11 3500 280 58 117 31 20 88 55 113 19 60 152 Max. Unit S pF pF pF pF ns ns ns ns nC nC nC
VDS = 25V, f = 1MHz, VGS = 0 VGS = 0V, VDS = 0V to 800V VDD = 450V, ID = 5A RG = 4.7Ω VGS = 10V (see Figure 13) VDD = 720V, ID = 10A, VGS = 10V, RG = 4.7Ω (see Figure 14)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80.