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W12NK90Z Dataheets PDF



Part Number W12NK90Z
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description STW12NK90Z
Datasheet W12NK90Z DatasheetW12NK90Z Datasheet (PDF)

STW12NK90Z N-channel 900V - 0.72Ω - 11A - TO-247 Zener-protected SuperMESH™ Power MOSFET General features Type STW12NK90Z ■ ■ ■ ■ ■ VDSS 900V RDS(on) <0.88Ω ID 11A pW 230W Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatibility TO-247 Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistanc.

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STW12NK90Z N-channel 900V - 0.72Ω - 11A - TO-247 Zener-protected SuperMESH™ Power MOSFET General features Type STW12NK90Z ■ ■ ■ ■ ■ VDSS 900V RDS(on) <0.88Ω ID 11A pW 230W Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatibility TO-247 Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Internal schematic diagram Applications ■ Switching application Order codes Part number STW12NK90Z Marking W12NK90Z Package TO-247 Packaging Tube October 2006 Rev 5 1/14 www.st.com 14 Free Datasheet http://www.datasheet4u.com/ Contents STW12NK90Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ............................. 7 3 4 5 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 Free Datasheet http://www.datasheet4u.com/ STW12NK90Z Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VGS ID ID IDM (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5KΩ) Single pulse avalanche energy Storage temperature -55 to 150 Max. operating junction temperature °C Value 900 ± 30 11 7 44 230 1.85 6000 4.5 Unit V V A A A W W/°C V mJ Ptot VESD(G-S) EAS (2) Tstg Tj 2. 1. Pulse width limited by safe operating area. ISD ≤ 11A, di/dt ≤ 200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX. Table 2. Rthj-case Rthj-amb TJ Thermal data Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose 0.54 50 300 °C/W °C/W °C Table 3. Symbol IAR EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max value 11 500 Unit A mJ Table 4. Symbol BVGSO Gate-source zener diode Parameter Gate-source breakdown voltage Test conditions Igs=± 1mA (open drain) Min. 30 Typ. Max. Unit V 3/14 Free Datasheet http://www.datasheet4u.com/ Electrical ratings STW12NK90Z 1.1 Protection features of gate-to-source zener diodes The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 4/14 Free Datasheet http://www.datasheet4u.com/ STW12NK90Z Electrical characteristics 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1mA, VGS =0 VDS = max rating VDS = max rating, TC = 125°C VGS = ± 20V VDS = VGS, ID = 100µA VGS = 10V, ID = 5.5A 3 3.75 0.72 Min. 900 1 50 ±10 4.5 0.88 Typ. Max. Unit V µA µA µA V Ω IDSS IGSS VGS(th) RDS(on) Table 6. Symbol gfs (1) Ciss Coss Crss Coss eq(2) td(on) tr td(off) tf Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 15V, ID = 5.5A Min. Typ. 11 3500 280 58 117 31 20 88 55 113 19 60 152 Max. Unit S pF pF pF pF ns ns ns ns nC nC nC VDS = 25V, f = 1MHz, VGS = 0 VGS = 0V, VDS = 0V to 800V VDD = 450V, ID = 5A RG = 4.7Ω VGS = 10V (see Figure 13) VDD = 720V, ID = 10A, VGS = 10V, RG = 4.7Ω (see Figure 14) 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80.


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