2N3507L

Data Sheet No. 2N3507L Type 2N3507L Geometry 1506 Polarity NPN Qual Level: JAN - JANTXV Features: General-purpose silicon transistor for switching and amplifier applications. Housed in TO-5 case. Also available in chip form using the 1506 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/349 which Semicoa meets in all cases. Generic Part Number: 2N3507L REF: MIL-PRF-19500/349 TO-5 Maximum Ratings TC = 25 C unless otherwise specified o Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25oC Derate above 25oC Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT Rating 50 80 5.0 3.0 1.0 5.71 Unit V V V A W mW/oC o TJ TSTG -65 to +200 -65 to +200 C C o Data Sheet No. 2N3507L Electrical Characteristics TC = 25 C unless otherwise specified o OFF Characteristics Collector-Base Breakdown Voltage IC = 10 µA Collector-Emitter Breakdown Voltage IC = 10 mA Emitter-Base Breakdown Voltage IE = 10 µA Collector-Emitter Cutoff Current VCE = 60 V, VEB = 4 V Collector-Emitter Cutoff Current o VCE = 60 V, VEB = 4 V, TA = +150 C Collector Current Continuous VCB = 50 V Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX1 ICEX2 IC Min 80 50 5.0 ----3.0 Max ------1.0 1.0 --- Unit V V V µA µA A ON Characteristics DC Current Gain IC = 500 mA, VCE = 1 V (pulsed) IC = 1.5 A, VCE = 2 V (pulsed) IC = 2.5 A, VCE = 3 V (pulsed) IC = 3.0 A, VCE = 5 V (pulsed) IC = 500 mA,...