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2SC3679
Silicon NPN Power Transistors
Description
isc Silicon
NPN
Power
Transistor
2SC3679 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching
regulator
and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) ...
Inchange Semiconductor
Download 2SC3679 Datasheet
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