2SC3661

SMD Type Transistors IC NPN Epitaxial Planar Silicon Transistor 2SC3661 SOT-23 Unit: mm Low frequency general-purpose amplifiers, drivers, muting circuit. +0.1 2.4-0.1 Adoption of FBET process. High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage (VCE(sat) High VEBO (VEBO 15V). 0.5V). +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Icp PC Tj Tstg Rating 30 25 15 300 500 200 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 20V, IE=0 VEB = 10V, IC=0 VCE =5V , IC = 10mA VCE = 10V , IC = 10mA VCB = 10V , f = 1.0MHz 800 1500 250 2.7 0.12 0.85 30 25 15 0.5 1.2 Min Typ Max 0.1 0.1 3200 MHz pF V V V V V Unit ìA ìA VCE(sat) IC = 200mA , IB = 4mA VBE(sat) IC = 200mA , IB = 4mA V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO IC = 1mA , IB = 0 V(BR)EBO IE = 10ìA ...