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2SC3659

Silicon NPN Power Transistors

Description

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCES= 1700V (Min) ·Built-in Damper Didoe ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emi...

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