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2SC3650

SeCoS

NPN Silicon Epitaxial Planar Transistor

Elektronische Bauelemente 2SC3650 1.2 A , 30 V NPN Plastic-Encapsulate Transistor FEATURES Small Flat Package. Large C...


SeCoS

2SC3650

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Description
Elektronische Bauelemente 2SC3650 1.2 A , 30 V NPN Plastic-Encapsulate Transistor FEATURES Small Flat Package. Large Current Capacity. High DC Current Gain Low VCE(sat) RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 123 A EC 4 APPLICATION LF Amplifiers, Various Drivers, Muting Circuit MARKING CF PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size 7 inch B F G H J D K L REF. A B C D E F Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.30 2.60 1.50 1.70 0.89 1.20 REF. G H J K L Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44 Collector 2 1 Base 3 Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Continuous Collector Current Collector Power Dissipation Thermal Resistance Junction to Ambient Junction, Storage Temperature VCBO VCEO VEBO IC PC RθJA TJ, TSTG 30 25 15 1.2 500 250 150, -55~150 Unit V V V A mW °C / W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Collector to Base Breakdown Voltage V(BR)CBO 30 - - V Collector to Emitter Breakdown Voltage V(BR)CEO 25 - - V Emitter to Base Breakdown Voltage V(BR)EBO 15 - - V Collector Cut-Off Current ICBO - - 0.1 µA Emitter Cut-Off Current IEBO - - 0.1 µA DC Current Gain 800 - 3200 hFE 600 - - Collector to Emitter Saturation Voltage Base to emitte...




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