Elektronische Bauelemente
2SC3650
1.2 A , 30 V NPN Plastic-Encapsulate Transistor
FEATURES
Small Flat Package. Large C...
Elektronische Bauelemente
2SC3650
1.2 A , 30 V
NPN Plastic-Encapsulate
Transistor
FEATURES
Small Flat Package. Large Current Capacity. High DC Current Gain Low VCE(sat)
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
SOT-89
123 A EC
4
APPLICATION
LF Amplifiers, Various Drivers, Muting Circuit
MARKING
CF
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
Leader Size 7 inch
B F
G H
J
D
K L
REF.
A B C D E F
Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.30 2.60
1.50 1.70
0.89 1.20
REF.
G H J K L
Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52
0.35 0.44
Collector
2
1
Base
3
Emitter
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Continuous Collector Current Collector Power Dissipation Thermal Resistance Junction to Ambient Junction, Storage Temperature
VCBO VCEO VEBO
IC PC RθJA TJ, TSTG
30 25 15 1.2 500 250 150, -55~150
Unit
V V V A mW °C / W °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Collector to Base Breakdown Voltage
V(BR)CBO
30
-
-
V
Collector to Emitter Breakdown Voltage V(BR)CEO
25
-
-
V
Emitter to Base Breakdown Voltage
V(BR)EBO
15
-
-
V
Collector Cut-Off Current
ICBO - - 0.1 µA
Emitter Cut-Off Current
IEBO - - 0.1 µA
DC Current Gain
800 - 3200
hFE
600 -
-
Collector to Emitter Saturation Voltage Base to emitte...