2SC3648

SMD Type High-Voltage Switching Applications 2SC3648 Transistors Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Speed Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Jumction temperature Storage temperature Range * Mounted on ceramic board (250 mm x 0.8 mm) 2 Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg Rating 180 160 6 0.7 1.5 500 1.3 150 -55 to +150 Unit V V V A A mW W Electrical Characteristics Ta = 25 Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Gain-Bandwidth Product Collector Output Capacitance Turn-On Time Storage Time Fall Time Symbol ICBO IEBO Testconditons VCB = 120V , IE = 0 VEB = 4V , IC = 0 180 160 6 100 0.2 0.85 120 11 60 See Test Circuit. 900 60 ns 400 0.5 1.2 V V MHz pF Min Typ Max 0.1 0.1 Unit uA uA V V V V(BR)CBO IC = 10uA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10uA , IC = 0 hFE VCE = 5V , IC = 100mA VCE(sat) IC = 250mA , IB = 25mA VBE(sat) IC = 250mA , IB = 25mA fT Cob ton tstg tf VCE = 10V , IC = 50mA VCB = 10V , IE = 0 , f = 1MHz www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.com/ SMD Type 2SC3648 Test Circuit Transistors hFE Class...