2SC3619

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage switching and amplifier applications. ·Color TV horizontal driver applications. ·Color TV chroma output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 100 mA IB Base Current-Continuous 50 mA PC Collector Power Dissipation 1.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3619 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA; IB= 1mA VBE(sat) Base-Emitter Saturation Voltage IC= 10mA; IB= 1mA ICBO Collector Cutoff Current VCB= 240V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC Current Gain IC= 4mA; VCE= 10V hFE-2 DC Current Gain IC= 20mA; VCE= 10V fT Current-Gain—Bandwidth Product IC= 20mA; VCE= 20V COB Output Capacitance IE= 0; VCB= 20V, ftest= 1MHz 2SC3619 MIN TYP. MAX UNIT 1.0 V 1.0 V 1 μA 1 μA 20 30 200 50 MHz 3 pF Notice： ISC reserves the rights to make chang...