Power MOSFET
PD -96257
IRF8910GPbF
HEXFET® Power MOSFET
Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, grap...
Description
PD -96257
IRF8910GPbF
HEXFET® Power MOSFET
Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box
l l
VDSS
20V
13.4m:@VGS = 10V
1 2 3 4
RDS(on) max
ID
10A
Lead-Free Halogen-Free
S1 G1
8 7 6 5
D1 D1 D2 D2
Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating
S2 G2
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
20 ± 20 10 8.3 82 2.0 1.3 0.016 -55 to + 150
Units
V
c
A W W/°C °C
Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Thermal Resistance
Parameter
RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient f
g
Typ.
––– –––
Max.
42 62.5
Units
°C/W
Notes through
are on page 10
www.irf.com
1
7/10/09
Free Datasheet http://www.datasheet4u.com/
IRF8910GPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leaka...
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