IRF7380QPBF

PD - 96132B IRF7380QPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free HEXFET® Power MOSFET VDSS 80V RDS(on) max 73m:@VGS = 10V ID 2.2A S1 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Description Additional features of These HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications. This surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. G1 S2 G2 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 100°C IDM PD @TA = 25°C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 80 ± 20 3.6 2.9 29 2.0 0.02 2.3 -55 to + 150 Units V h A W W/°C V/ns °C c Maximum Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and e Storage Temperature Range Thermal Resistance Parameter RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient (PCB Mount) * Typ. ––– ––– Max. 42 50 Units °C/W Notes  through † are on page 8 www.irf.com 1 08/09/10 Free Datashe...