Power MOSFET
Applications
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Dual Common Drain Control MOSFETs for Multiphase DC-DC Converters
IRF6723M2DTRPbF IRF6723M2DTR1PbF
Typi...
Description
Applications
l
Dual Common Drain Control MOSFETs for Multiphase DC-DC Converters
IRF6723M2DTRPbF IRF6723M2DTR1PbF
Typical values (unless otherwise specified)
PD - 97441
DirectFET Power MOSFET RDS(on) Qgs2
1.2nC
Features
Replaces Two Discrete MOSFETs Optimized for High Frequency Switching Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Compatible with existing Surface Mount Techniques l RoHS Compliant and Halogen Free l 100% Rg tested
l l l l l l
VDSS Qg
tot
VGS Qgd
3.3nC
RDS(on) Qoss
6.3nC
30V max ±20V max 5.2mΩ@ 10V 8.6mΩ@ 4.5V
Qrr
17nC
Vgs(th)
1.8V
9.4nC
G1
G2
D
S1 S2
D
Applicable DirectFET Outline and Substrate Outline
S1 S2 SB M2 M4 MA L4 L6
DirectFET ISOMETRIC
L8
Description
The IRF6723M2DPbF combines two MOSFET switches optimized for high side applications into a single medium can DirectFET package. The switches have low gate resistance and low charge along with ultra low package inductance providing significant reduction in switching losses. The reduced losses make this product ideal for high efficiency multiphase DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6723M2DPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the highest power density for two MOSFETs in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometr...
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