IRF6723M2DTR1PBF

Applications l Dual Common Drain Control MOSFETs for Multiphase DC-DC Converters IRF6723M2DTRPbF IRF6723M2DTR1PbF Typical values (unless otherwise specified) PD - 97441 DirectFET™ Power MOSFET ‚ RDS(on) Qgs2 1.2nC Features Replaces Two Discrete MOSFETs Optimized for High Frequency Switching Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Compatible with existing Surface Mount Techniques l RoHS Compliant and Halogen Free l 100% Rg tested l l l l l l VDSS Qg tot VGS Qgd 3.3nC RDS(on) Qoss 6.3nC 30V max ±20V max 5.2mΩ@ 10V 8.6mΩ@ 4.5V Qrr 17nC Vgs(th) 1.8V 9.4nC G1 G2 D S1 S2 D Applicable DirectFET Outline and Substrate Outline  S1 S2 SB M2 M4 MA L4 L6 DirectFET ™ ISOMETRIC L8 Description The IRF6723M2DPbF combines two MOSFET switches optimized for high side applications into a single medium can DirectFET package. The switches have low gate resistance and low charge along with ultra low package inductance providing significant reduction in switching losses. The reduced losses make this product ideal for high efficiency multiphase DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6723M2DPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the highest power density for two MOSFETs in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometr...